Manufacturing method of semiconductor device suppressing...

Details Manufacturing method of semiconductor device suppressing... Manufacturing method of semiconductor device suppressing...

2007-12-25

2007-12-25

Dang, Trung (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S328000, C257S336000, C257S344000, C257S345000, C257SE27046

Reexamination Certificate

active

11785465

ABSTRACT:
An ideal step-profile in a channel region is realized easily and reliably, whereby suppression of the short-channel effect and prevention of mobility degradation are achieved together. A silicon substrate is amorphized to a predetermined depth from a semiconductor film, and impurities to become the source/drain are introduced in this state. Then the impurities are activated, and the amorphized portion is recrystallized, by low temperature solid-phase epitaxial regrowth. With the processing temperature required for the low temperature solid-phase epitaxial regrowth being within a range of 450° C.-650° C., thermal diffusion of the impurities into the semiconductor film is suppressed, thereby maintaining the initial steep step-profile.

REFERENCES:
patent: 3846194 (1974-11-01), Dumin
patent: 6174754 (2001-01-01), Lee et al.
patent: 2004/0207011 (2004-10-01), Iwata et al.
patent: 2005/0064664 (2005-03-01), Shima
patent: 2006/0157732 (2006-07-01), Von Kaenel et al.
patent: 20003-086706 (2003-03-01), None
patent: 2004-153246 (2004-05-01), None
Korean Office Action dated Oct. 27, 2006, issued in corresponding Korean patent application No. 10-2005-0067180.

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