Nonvolatile semiconductor memory device having improved...

Details Nonvolatile semiconductor memory device having improved... Nonvolatile semiconductor memory device having improved...

2007-10-02

2007-10-02

Phung, Anh (Department: 2824)

Static information storage and retrieval

Read/write circuit

C365S200000, C365S210130

Reexamination Certificate

active

11409121

ABSTRACT:
In a memory cell array of an MRAM, a normal memory cell is compared with a reference memory cell which holds a reference value, thereby storing data of one bit per cell. Two spare memory cells store data of one bit as a whole. By writing complementary values to the two spare memory cells and connecting these spare memory cells to a sense amplifier, the stored data of one bit is read. A spare memory cell section which is often arranged in an array peripheral portion becomes more resistant against a variation in finished dimensions of elements and a success rate for replacing and relieving a defective memory cell by a spare memory cell increases.

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Roy Scheuerlein et al., “A 10ns Read and Write Non-Volatile Memory Array Using a Magnetic Tunnel Junction and FET Switch In Each Cell”, Feb. 2000, pp. 94-95, 128-129, 409-410, ISSCC DIgest of Technical Papers, TA7.2
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