Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2007-08-07

2007-08-07

Quach, T. N. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S333000, C257SE29201, C438S268000, C438S270000

Reexamination Certificate

active

11245204

ABSTRACT:
A semiconductor device includes: a semiconductor substrate of the first-type; a semiconductor region of the first-type formed on the substrate; a gate electrode a part of which is present within a trench selectively formed in part of the semiconductor region, and an extended top-end to have a wide width via a stepped-portion; a gate insulating-film formed between the trench and the gate electrode along a wall surface of the trench; a base layer of the second-type on the region via the film to enclose a side-wall except a bottom of the trench; a source region of the first-type adjacent to the film outside the trench in the vicinity of a top surface of the base layer; and an insulating-film formed partially between a bottom-surface of the top-end and a top-surface of the source region and formed to have a thickness larger than that of the gate insulating-film within the trench.

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U.S. Appl. No. 11/245,204, filed Oct. 7, 2005, Nakamura et al.
U.S. Appl. No. 11/358,225, filed Feb. 22, 2005, Nakamura et al.

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