Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-11-20
2007-11-20
Pham, Hoai (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S303000, C257S306000, C257SE27086
Reexamination Certificate
active
11589758
ABSTRACT:
An interlayer insulating film (22) is formed on a semiconductor substrate. A conductive plug (25) is embedded in a via hole formed through the interlayer insulating film. An oxygen barrier conductive film (33) is formed on the interlayer insulating film and being inclusive of an area of the conductive plug as viewed in plan. A capacitor (35) laminating a lower electrode, a dielectric film and an upper electrode in this order is formed on the oxygen barrier film. An intermediate layer (34) is disposed at an interface between the oxygen barrier film and the lower electrode. The intermediate layer is made of alloy which contains at least one constituent element of the oxygen barrier film and at least one constituent element of the lower electrode.
REFERENCES:
patent: 6831323 (2004-12-01), Ito et al.
patent: 11-168174 (1999-06-01), None
patent: 2000-91511 (2000-03-01), None
patent: 2002-151656 (2002-05-01), None
patent: 2004-47633 (2004-02-01), None
Pham Hoai
Westerman, Hattori, Daniels & Adrian , LLP.
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