NAND flash memory device and methods of its formation and...

Details NAND flash memory device and methods of its formation and... NAND flash memory device and methods of its formation and...

2007-10-16

2007-10-16

Nguyen, Tan T. (Department: 2827)

Static information storage and retrieval

Floating gate

Particular connection

C365S185330

Reexamination Certificate

active

11379752

ABSTRACT:
A NAND flash memory device, and methods of forming and operating the same are provided. The NAND flash memory device includes first and second selection gate lines sequentially disposed at one side of a plurality of cell gate lines. A first selection transistor including the first selection gate line serves as a buffer for decreasing a highly boosted channel voltage of a non-selected cell to minimize the leakage current of the NAND flash memory device.

REFERENCES:
patent: 5590072 (1996-12-01), Choi
patent: 6362050 (2002-03-01), Kalnitsky et al.
patent: 6867453 (2005-03-01), Shin et al.
patent: 2003-51557 (2003-02-01), None
patent: 2004-0080019 (2004-09-01), None
English language abstract of Korean Publication No. 2004-0080019.
English language abstract of Japanese Publication No. 2003-51557.

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