Self masking contact using an angled implant

Details Self masking contact using an angled implant Self masking contact using an angled implant

2007-06-19

2007-06-19

Nhu, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S288000, C257SE21053, C257SE21056, C257SE21189, C257SE27133

Reexamination Certificate

active

11071225

ABSTRACT:
A method of implanting, for example, a phosphorous plug over a charge collection region and a method of forming a contact over the phosphorous plug implant and charge collection region. The method allows implantation of phosphorous or other materials without contamination of other contact regions. The method further allows implantation of a material with only one step and without an extra masking step.

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