Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-08-28
2007-08-28
Crane, Sara (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C438S311000, C438S455000, C438S458000
Reexamination Certificate
active
11196866
ABSTRACT:
The present invention relates to semiconductor-on-insulator structures having strained semiconductor layers. According to one embodiment of the invention, a semiconductor-on-insulator structure has a first layer including a semiconductor material, attached to a second layer including a glass or glass-ceramic, with the CTEs of the semiconductor and glass or glass-ceramic selected such that the first layer is under tensile strain. The present invention also relates to methods for making strained semiconductor-on-insulator layers.
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Aitken Bruce Gardiner
Dejneka Matthew John
Gadkaree Kishor Purushottam
Pinckney Linda Ruth
Corning Incorporated
Crane Sara
Schaeberle Timothy M.
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