Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-12-18
2007-12-18
Tran, Minhloan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S432000, C257S059000, C257S072000, C257S347000, C257SE29068, C257SE29139, C257SE29299
Reexamination Certificate
active
11043647
ABSTRACT:
An exemplary embodiment includes a semiconductor device. The semiconductor device can include a channel including one or more compounds of the formula AxBxOx, wherein each A is selected from the group of Cu, Ag, Sb, each B is selected from the group of Cu, Ag, Sb, Zn, Cd, Ga, In, Ge, Sn, and Pb, each O is atomic oxygen, each x is independently a non-zero integer, and each of A and B are different.
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Herman Gregory
Hoffman Randy
Mardilovich Peter
Hewlett--Packard Development Company, L.P.
Liu Benjamin Tzu-Hung
Tran Minhloan
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