Semiconductor device and method of fabricating the same

Details Semiconductor device and method of fabricating the same Semiconductor device and method of fabricating the same

2007-12-18

2007-12-18

Potter, Roy (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S322000

Reexamination Certificate

active

11152547

ABSTRACT:
A semiconductor device includes a substrate having a pair of first diffused regions, and a gate including an oxide film provided on the substrate, and a charge storage layer provided on the oxide film, the charge storage layer being an electrical insulator capable of storing charges in bit areas. The oxide film has first portions related to the bit areas and a second portion that is located between the bit areas and is thicker than the first potions. The first portions serve as tunneling oxide portions, while the second portion allows reduced tunneling.

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patent: 8-64697 (1996-03-01), None
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