Resistive memory device with improved data retention

Details Resistive memory device with improved data retention Resistive memory device with improved data retention

2007-10-23

2007-10-23

Hoang, Huan (Department: 2827)

Static information storage and retrieval

Systems using particular element

Molecular or atomic

C365S148000

Reexamination Certificate

active

11165005

ABSTRACT:
In the present method of programming a memory device from an erased state, the memory device includes first and second electrodes, a passive layer between the first and second electrodes, and an active layer between the first and second electrodes. In the programming method, (i) an electrical potential is applied across the first and second electrodes from higher to lower potential in one direction to reduce the resistance of the memory device, and (ii) an electrical potential is applied across the first and second electrodes from higher to lower potential in the other direction to further reduce the resistance of the memory device.

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