Flash memory device

Details Flash memory device Flash memory device

2007-10-09

2007-10-09

Vu, Hung (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S316000

Reexamination Certificate

active

10838215

ABSTRACT:
A non-volatile memory device includes a substrate, an insulating layer, a fin structure, a floating gate, an inter-gate dielectric and a control gate. The insulating layer is formed on the substrate and the fin structure is formed on the insulating layer. The fin structure may include a strained layer formed on a non-strained layer.

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Digh Hisamoto et al., “FinFET-A Self-Aligned Double-Gate MOSFET Scalable to 20 nm,” IEEE Transactions on Electron Devices, vol. 47, No. 12, Dec. 2000, pp. 2320-2325.
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Co-pending U.S. Appl. No. 10/929,538 by Yu et al., filed Aug. 31, 2004, entitled “Non-Volatile Memory Device”, 25 pages.

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