Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-08-07
2007-08-07
Luu, Chuong A. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S333000, C257S328000, C257S342000
Reexamination Certificate
active
11057138
ABSTRACT:
In one embodiment, an edge termination structure is formed in a semiconductor layer of a first conductivity type. The termination structure includes an isolation trench and a conductive layer in contact with the semiconductor layer. The semiconductor layer is formed over a semiconductor substrate of a second conductivity type. In a further embodiment, the isolation trench includes a plurality of shapes that comprise portions of the semiconductor layer.
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Data Sheet, Semiconductor Components Industries, LLC, NUF6106FCT1, 6 Channel EMI.
Grivna Gordon M.
Loechelt Gary H.
Zdebel Peter J.
Jackson Kevin B.
Luu Chuong A.
Semiconductor Components Industries L.L.C.
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