Semiconductor device edge termination structure

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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Details

C257S333000, C257S328000, C257S342000

Reexamination Certificate

active

11057138

ABSTRACT:
In one embodiment, an edge termination structure is formed in a semiconductor layer of a first conductivity type. The termination structure includes an isolation trench and a conductive layer in contact with the semiconductor layer. The semiconductor layer is formed over a semiconductor substrate of a second conductivity type. In a further embodiment, the isolation trench includes a plurality of shapes that comprise portions of the semiconductor layer.

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Data Sheet, Semiconductor Components Industries, LLC, NUF6106FCT1, 6 Channel EMI.

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