Semiconductor device edge termination structure

Details Semiconductor device edge termination structure Semiconductor device edge termination structure

2007-08-07

2007-08-07

Luu, Chuong A. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S333000, C257S328000, C257S342000

Reexamination Certificate

active

11057138

ABSTRACT:
In one embodiment, an edge termination structure is formed in a semiconductor layer of a first conductivity type. The termination structure includes an isolation trench and a conductive layer in contact with the semiconductor layer. The semiconductor layer is formed over a semiconductor substrate of a second conductivity type. In a further embodiment, the isolation trench includes a plurality of shapes that comprise portions of the semiconductor layer.

REFERENCES:
patent: 5216275 (1993-06-01), Chen
patent: 5438215 (1995-08-01), Tihanyi
patent: 5872421 (1999-02-01), Potter
patent: 5998288 (1999-12-01), Gardner et al.
patent: 6184555 (2001-02-01), Tihanyi et al.
patent: 6191446 (2001-02-01), Gardner et al.
patent: 6210999 (2001-04-01), Gardner et al.
patent: 6255152 (2001-07-01), Chen
patent: 6274904 (2001-08-01), Tihanyi
patent: 6278165 (2001-08-01), Oowaki et al.
patent: 6355955 (2002-03-01), Gardner et al.
patent: 6410955 (2002-06-01), Baker et al.
patent: 6479352 (2002-11-01), Blanchard
patent: 6509240 (2003-01-01), Ren et al.
patent: 6512267 (2003-01-01), Kinzer et al.
patent: 6608350 (2003-08-01), Kinzer et al.
patent: 6878989 (2005-04-01), Izumisawa et al.
Data Sheet, Semiconductor Components Industries, LLC, NUF6106FCT1, 6 Channel EMI.

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