Trench capacitor array having well contacting merged plate

Details Trench capacitor array having well contacting merged plate Trench capacitor array having well contacting merged plate

2007-08-14

2007-08-14

Louie, Wai-Sing (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE29346

Reexamination Certificate

active

10905808

ABSTRACT:
According to an aspect of the invention, a structure is provided in which an array of trench capacitors includes a well contact to a merged buried plate diffusion region. The array, which is disposed in a substrate, includes a contact for receiving a reference potential. Each trench capacitor includes a node dielectric and a node conductor formed within the trench. Buried plate (BP) diffusions extend laterally outward from a lower portion of each trench of the array, the BP diffusions merging to form an at least substantially continuous BP diffusion region across the array. An isolation region extends over a portion of the BP diffusion region. A doped well region is formed within the substrate extending from a major surface of the substrate to a depth below a top level of the substantially continuous BP diffusion region. An electrical interconnection is also provided to the well region.

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