Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Patent
1989-07-24
1990-12-11
Kaplan, G. L.
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
357 71, C23C 1404, C23C 1406, C23C 1408
Patent
active
049768395
ABSTRACT:
A titanium nitride barrier layer of 50 to 200 nm in thickness is fabricated between a silicon substrate and an aluminum electrode layer of an IC device by reactive sputtering performed in a mixed gas including oxygen in a proportion of 1 to 5% by volume relative to other gases, comprising an inert gas and a reactive gas, providing the temperature of the silicon substrate at 350.degree. to 550.degree. C. during the reactive sputtering, so that the product has a failure rate, indicating the property of preventing mutual diffusion of silicon and aluminum atoms from occurring, of less than 1% and a resistivity less than 100 .mu..OMEGA..cm.
REFERENCES:
patent: 4783248 (1988-11-01), Kohlhase et al.
Lee, B. et al., "Effect of Oxygen on the Diffusion Barrier Properties of Tin." Proceedings of the Fourth International IEEE VLSI Multilevel Interconnect Conference, (Santa Clara, Calif., 15th-16th Jun. 1987), pp. 344-350.
Wittmer, Marc, "Properties and Microelectronic Applications of Thin Films of Refractory Metal Nitrides." Journal of Vacuum Science & Technology, vol. 3, No. 4 (Jul./Aug. 1985), pp. 1797-1803.
Fujitsu Limited
Kaplan G. L.
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