Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2007-10-09
2007-10-09
Loke, Steven (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C257S056000, C257S057000, C257SE21560, C438S149000, C438S158000, C349S043000
Reexamination Certificate
active
10958260
ABSTRACT:
A thin film transistor array substrate device includes a gate line formed on a substrate, a data line crossing the gate line with a gate insulating pattern position therebetween, a thin film transistor at a crossing of the gate line and the data line, a pixel electrode formed at a pixel region defined by the crossing of the gate line and the data line and connected to the thin film transistor, a gate pad part having a lower gate pad electrode connected to the gate line and an upper gate pad electrode connected to the lower gate pad electrode, a data pad part having a lower data pad electrode connected to the date line and an upper data pad electrode connected to the lower data pad electrode, and a passivation film pattern formed at a region besides the region including the pixel electrode, the upper data pad electrode, and the upper gate pad electrode, wherein the pixel electrode is formed on the gate insulating pattern of the pixel region exposed by the passivation film pattern.
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Cho Heung Lyul
Kim Hong Sik
Lim Byoung Ho
Seo Hyun Sik
LG.Philips LCD Co. , Ltd.
Loke Steven
Morgan & Lewis & Bockius, LLP
Nguyen Dao H.
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