High-voltage transistor device having an interlayer...

Details High-voltage transistor device having an interlayer... High-voltage transistor device having an interlayer...

2007-11-27

2007-11-27

Weiss, Howard (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

With current flow along specified crystal axis

C257S256000, C438S239000, C438S249000

Reexamination Certificate

active

10999508

ABSTRACT:
A high-voltage transistor device with an interlayer dielectric (ILD) etch stop layer for use in a subsequent contact hole process is provided. The etch stop layer is a high-resistivity film having a resistivity greater than 10 ohm-cm, thus leakage is prevented and breakdown voltage is improved when driving a high voltage greater than 5V at the gate site. A method for fabricating the high-voltage device is compatible with current low-voltage device processes and middle-voltage device processes.

REFERENCES:
patent: 6074908 (2000-06-01), Huang
patent: 6235653 (2001-05-01), Chen et al.
patent: 6316348 (2001-11-01), Fu et al.
patent: 6468870 (2002-10-01), Kao et al.
patent: 6492222 (2002-12-01), Xing
patent: 6576546 (2003-06-01), Gilbert et al.
patent: 6630398 (2003-10-01), Tsai et al.
patent: 2006/0097321 (2006-05-01), Kim
INSPEC Abstract No. B9412-5230-025 Jul.-Aug. 1994.

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