Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-06-19
2007-06-19
Trinh, Michael (Department: 2822)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S622000, C438S637000, C438S642000, C438S643000, C438S644000, C438S645000, C438S672000, C438S675000
Reexamination Certificate
active
10811927
ABSTRACT:
Cu interconnections embedded in an interconnection slot of a silicon oxide film are formed by polishing using CMP to improve the insulation breakdown resistance of a copper interconnection formed using the Damascene method, and after a post-CMP cleaning step, the surface of the silicon oxide film and Cu interconnections is treated by a reducing plasma (ammonia plasma). Subsequently, a continuous cap film (silicon nitride film) is formed without vacuum break.
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Noguchi Junji
Ohashi Naohumi
Saito Tatsuyuki
Antonelli, Terry Stout & Kraus, LLP.
Au Bac H.
Renesas Technology Corp.
Trinh Michael
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