Method of forming barrier metal in semiconductor device

Details Method of forming barrier metal in semiconductor device Method of forming barrier metal in semiconductor device

2007-12-25

2007-12-25

Le, Thao P. (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S618000, C438S637000

Reexamination Certificate

active

11024795

ABSTRACT:
A method of forming a barrier metal in a semiconductor device. The present invention includes forming an insulating layer on a substrate having a lower metal line formed thereon, forming an opening exposing the lower metal line through the insulating layer, and forming a barrier metal layer on a sidewall of the opening and the insulating layer except the lower metal line by applying a positive voltage to the substrate.

REFERENCES:
patent: 2003/0073314 (2003-04-01), Skinner et al.
patent: 2004/0087137 (2004-05-01), Takewaka et al.
patent: 2005/0255700 (2005-11-01), Gopalraja et al.

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