Method for forming multi-layer bumps on a substrate

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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C257S738000, C257S780000

Reexamination Certificate

active

11263440

ABSTRACT:
A method for forming multi-layer bumps on a substrate includes depositing a first metal powder on the substrate, and selectively melting or reflowing a portion of the first metal powder to form first bumps. A second metal powder is then deposited on the first bumps, and melted to form second bumps on the first bumps. A masking plate is disposed over the substrate to select the portions of the metal powders that are melted and the metal powders are melted via an irradiation beam. The multi-layer bump is formed without the need for any wet chemicals.

REFERENCES:
patent: 5470787 (1995-11-01), Greer
patent: 5672542 (1997-09-01), Schwiebert et al.
patent: 5880017 (1999-03-01), Schwiebert et al.
patent: 6109507 (2000-08-01), Yagi et al.
patent: 2002/0064930 (2002-05-01), Ishikawa
patent: 07153764 (1995-06-01), None
patent: 2002 076043 (2002-03-01), None

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