Semiconductor device and method of manufacturing the same

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S356000, C257SE29345

Reexamination Certificate

active

10847314

ABSTRACT:
A semiconductor device includes a semiconductor substrate having a resistivity of at least 30 Ω·cm, a first MISFET formed on the semiconductor substrate to function as a protective element, and a second MISFET protected by the first MISFET.

REFERENCES:
patent: 5055905 (1991-10-01), Anmo
patent: 5598018 (1997-01-01), Lidow et al.
patent: 5736767 (1998-04-01), Yoshitomi et al.
patent: 5867418 (1999-02-01), Okasaka et al.
patent: 6037238 (2000-03-01), Chang et al.
patent: 6573656 (2003-06-01), Clevenger et al.
patent: 6583475 (2003-06-01), Makita et al.
patent: 6586807 (2003-07-01), Nishida et al.
patent: 6683351 (2004-01-01), Morita et al.
patent: 02-037775 (1990-02-01), None
patent: 05-090286 (1993-04-01), None
patent: 11-274404 (1999-10-01), None
patent: 2002-280552 (2002-09-01), None
patent: 2003-51581 (2003-02-01), None
patent: 2003-258200 (2003-09-01), None
patent: 2003-258212 (2003-09-01), None
Device Electronics Fot Integrated Circuits,Second Edition, Richard S.Muller, Theodore L/Karmins, 1986.
Min Park, et al., “Optimization of High Q CMOS-Compatible Microwave Inductors Using Silicon CMOS Technology”, IEEE MTT-S Digest, 1997, pp. 129-132.
T. Ohguro, et al., “High Performance Digital-Analog Mixed Device on a Si Substrate with Resistivity Beyond 1KΩ CM”, IEDM, 2002, pp. 757-760.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor device and method of manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and method of manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method of manufacturing the same will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3871576

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.