Process for resurf diffusion for high voltage MOSFET

Details Process for resurf diffusion for high voltage MOSFET Process for resurf diffusion for high voltage MOSFET

2007-02-20

2007-02-20

Huynh, Andy (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

With means to increase breakdown voltage threshold

In integrated circuit

C257S491000, C257S496000, C257SE21531, C257SE21537

Reexamination Certificate

active

10888690

ABSTRACT:
A starting wafer for high voltage semiconductor devices is formed by implanting arsenic into the top surface of a p type silicon substrate wafer to a depth of about 0.1 micron. A N type non-graded epitaxial layer is then grown atop the substrate without any diffusion step so that the arsenic is not intentionally driven. Device junction are then diffused into the epitaxially grown layer.

REFERENCES:
patent: 5661314 (1997-08-01), Merrill et al.
patent: 5747853 (1998-05-01), So et al.
patent: 5861657 (1999-01-01), Ranjan
patent: 6100572 (2000-08-01), Kinzer
patent: 6593594 (2003-07-01), Alok
patent: 6949424 (2005-09-01), Springer

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