Static information storage and retrieval – Read/write circuit – Including reference or bias voltage generator
Reexamination Certificate
2007-08-07
2007-08-07
Elms, Richard T. (Department: 2824)
Static information storage and retrieval
Read/write circuit
Including reference or bias voltage generator
C365S189070, C365S191000, C365S226000
Reexamination Certificate
active
11139181
ABSTRACT:
An internal voltage generator for use in a semiconductor memory device, includes: an internal voltage generation unit for generating an internal voltage by performing a charge pumping operation to a power supply voltage based on a result of comparing the internal voltage with a reference voltage; and an initial internal voltage generation unit for supplying the power supply voltage as the internal voltage based on a result of comparing the internal voltage with the power supply voltage when an operating voltage supplied to the semiconductor memory device is lower than a predetermined voltage level.
REFERENCES:
patent: 6765428 (2004-07-01), Kim et al.
patent: 2003/0071679 (2003-04-01), Kono et al.
patent: 2004/0150463 (2004-08-01), Senda
Elms Richard T.
Hynix / Semiconductor Inc.
Luu Pho M.
LandOfFree
Semiconductor memory device with internal voltage generator does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor memory device with internal voltage generator, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device with internal voltage generator will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3870550