Static information storage and retrieval – Systems using particular element – Magnetic thin film
Reexamination Certificate
2007-08-07
2007-08-07
Huynh, Andy (Department: 2818)
Static information storage and retrieval
Systems using particular element
Magnetic thin film
C365S173000, C365S222000
Reexamination Certificate
active
10891109
ABSTRACT:
An MTJ memory cell is independently provided with a write word line and a read word line used for data write and data read. By separately arranging read word lines every two regions formed by dividing a memory array in the column direction, it is possible to reduce signal propagation delays of the read word lines and accelerate the data read operation. Activation of each read word line is controlled by a write word line in accordance with a row selection result in a hierarchical manner. A word-line-current control circuit forms and cuts off the current path of a write word line correspondingly to data write and data read.
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Huynh Andy
McDermott Will & Emery LLP
Nguyen Thinh T
Renesas Technology Corp.
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