Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-08-07
2007-08-07
Menz, Douglas M. (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S204000, C257S421000
Reexamination Certificate
active
11524970
ABSTRACT:
Depletion-mode ferroelectric transistors are adapted for use as non-volatile memory cells for memory devices and electronic systems. Various embodiments are described having a diode interposed between the bit line and a source/drain region of the transistor for added margin against read disturb.
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Huber Brian W.
Salling Craig T.
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