Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-10-09
2007-10-09
Lindsay, Jr., Walter (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C257SE21503, C257SE23106
Reexamination Certificate
active
10934635
ABSTRACT:
A method of selectively plating nickel on an intermediate semiconductor device structure. The method comprises providing an intermediate semiconductor device structure having at least one aluminum or copper structure and at least one tungsten structure. One of the aluminum or copper structure and the tungsten structure is nickel plated while the other remains unplated. The aluminum or copper structure or the tungsten structure may first be activated toward nickel plating. The activated aluminum or copper structure or the activated tungsten structure may then be nickel plated by immersing the intermediate semiconductor device structure in an electroless nickel plating solution. The unplated aluminum or copper structure or the unplated tungsten structure may subsequently be nickel plated by activating the unplated structure and nickel plating the activated structure. A method of simultaneously plating the aluminum or copper structure and the tungsten structure with nickel is also disclosed, as is an intermediate semiconductor device structure.
REFERENCES:
patent: 5079040 (1992-01-01), Brandenburger
patent: 5147692 (1992-09-01), Bengston
patent: 5169680 (1992-12-01), Ting et al.
patent: 5608264 (1997-03-01), Gaul
patent: 5618752 (1997-04-01), Gaul
patent: 5646067 (1997-07-01), Gaul
patent: 5682062 (1997-10-01), Gaul
patent: 5795619 (1998-08-01), Lin et al.
patent: 5814889 (1998-09-01), Gaul
patent: 6028011 (2000-02-01), Takase et al.
patent: 6300678 (2001-10-01), Suehiro et al.
patent: 6346148 (2002-02-01), Rantanen
patent: 6452274 (2002-09-01), Hasegawa et al.
patent: 6503343 (2003-01-01), Tench et al.
patent: 6566253 (2003-05-01), Jiang
patent: 6593221 (2003-07-01), Lindgren
patent: 6673710 (2004-01-01), Lin
patent: 6740582 (2004-05-01), Siniaguine
patent: 6759751 (2004-07-01), Sinha
patent: 6849519 (2005-02-01), Dong
patent: 6974776 (2005-12-01), Dean et al.
patent: 2001/0002317 (2001-05-01), Agarwal et al.
patent: 2003/0207470 (2003-11-01), Azuma et al.
patent: 0455915 (1991-11-01), None
patent: WO-03/019651 (2003-03-01), None
Law et al., The Effect of Passivation Defect on Electroless Nickel Under Bump Metallization Plating Process, www.ee.vst.hk/˜flipchip/ctu—simon.doc.
International Search Report for International Application No. PCT/US2005/030228, dated Jul. 12, 2007 (6 pages).
Akram Salman
Hiatt William M.
Wark James M.
Dinh Thu-Huong
Lindsay, Jr. Walter
Micro)n Technology, Inc.
TraskBritt
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