Semiconductor device with cavity and method of manufacture...

Details Semiconductor device with cavity and method of manufacture... Semiconductor device with cavity and method of manufacture...

2007-08-07

2007-08-07

Picardat, Kevin M. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S419000, C438S052000, C438S053000

Reexamination Certificate

active

11362737

ABSTRACT:
A semiconductor device is provided with a substrate with a cavity inside, the substrate including a device formation area located above the cavity, a plurality of trenches formed in the substrate to communicate with the cavity and surround the device formation area, and an oxide film formed around each of the trenches to continuously surround the device formation area.

REFERENCES:
patent: 5427975 (1995-06-01), Sparks et al.
patent: 5736430 (1998-04-01), Seefeldt et al.
patent: 2003/0209814 (2003-11-01), Farrar et al.
patent: 2005/0176222 (2005-08-01), Ogura
patent: 2006/0060921 (2006-03-01), Takizawa et al.
patent: 2001-144276 (2001-05-01), None
patent: 2003-332540 (2003-11-01), None
U.S. Appl. No. 09/650,748, filed Aug. 30, 2000, Tsutomu Sato.

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