Thin film magnetic memory device writing data with...

Details Thin film magnetic memory device writing data with... Thin film magnetic memory device writing data with...

2007-11-06

2007-11-06

Pham, Ly Duy (Department: 2827)

Static information storage and retrieval

Systems using particular element

Magnetic thin film

C365S066000, C365S154000, C365S189110, C365S230060

Reexamination Certificate

active

11607893

ABSTRACT:
An end of a selected bit line in a selected column is electrically coupled to an end of a corresponding current return line by one of first and second write column select gates, which are selectively turned on in response to results of column selection. A data write circuit sets the other end of the selected bit line and the other end of the current return line to one and the other of a power supply voltage and a ground voltage in accordance with a level of write data via one of first and second data buses and an inverted data bus, respectively.

REFERENCES:
patent: 5970019 (1999-10-01), Suzuki et al.
patent: 2001/0053091 (2001-12-01), Futatsuya et al.

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