Method of forming interconnect structure with interlayer...

Details Method of forming interconnect structure with interlayer... Method of forming interconnect structure with interlayer...

2007-10-09

2007-10-09

Cao, Phat X. (Department: 2814)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S648000, C438S675000, C257SE21577

Reexamination Certificate

active

09293188

ABSTRACT:
The present invention relates to the formation of an ILD layer while preventing or reducing oxidation of the upper surface of a metallic interconnect. Avoidance of oxidation of the upper surface of a metallic interconnect is achieved according to the present invention by passivating the exposed upper surface of the metallic interconnect prior to formation of the ILD. In order to avoid the oxidation of an upper surface of an interconnect during the formation of an ILD layer, an in situ passivation of the upper surface of the interconnect, immediately prior to or simultaneously with the formation of the ILD layer avoids the problems of the prior art.

REFERENCES:
patent: 5405492 (1995-04-01), Moslehi
patent: 5529954 (1996-06-01), Iijima et al.
patent: 5592024 (1997-01-01), Aoyama et al.
patent: 5633200 (1997-05-01), Hu
patent: 5659201 (1997-08-01), Wollesen
patent: 5780908 (1998-07-01), Sekiguchi et al.
patent: 5861675 (1999-01-01), Sasaki et al.
patent: 6077774 (2000-06-01), Hong et al.
patent: 6114238 (2000-09-01), Liao
patent: 6-140397 (1994-05-01), None
Hougen et al., “Chapter 10: Adsorption,” Chemical Process Principles, Second Edition, John Wiley and Sons, Inc. (1954), pp. 368-393.

Affiliated with

Also associated with

Rating

Method of forming interconnect structure with interlayer... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming interconnect structure with interlayer..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming interconnect structure with interlayer... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3861188