Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2007-08-14
2007-08-14
Wilczewski, M. (Department: 2822)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S412000, C438S422000, C438S739000, C438S753000
Reexamination Certificate
active
10851607
ABSTRACT:
A method of forming a semiconductor device includes forming a first layer over a semiconductor substrate and forming a second layer over the first layer. The second layer includes silicon and has an etch selectivity to the second layer that is greater than approximately 1,000. In one embodiment, the second layer is a porous material, such as porous silicon, porous silicon germanium, porous silicon carbide, and porous silicon carbon alloy. A gate insulator is formed over the second layer and a control electrode is formed over the gate insulator. The first layer is selectively removed with respect to the second layer and the semiconductor substrate.
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Freescale Semiconductor Inc.
Thomas Toniae M.
Vo Kim-Marie
Wilczewski M.
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