CMOS image sensor and method of manufacturing the same

Details CMOS image sensor and method of manufacturing the same CMOS image sensor and method of manufacturing the same

2007-11-27

2007-11-27

Jackson, Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S233000, C257SE23115, C257SE23130

Reexamination Certificate

active

11148061

ABSTRACT:
An image sensor includes a substrate with an epitaxial layer deposited thereon, a plurality of photodiodes buried in the epitaxial layer, and a plurality of field oxide films interposed between the photodiodes for insulating the photodiodes. Each of the field oxide films includes a trench formed on the epitaxial layer, a first oxide layer deposited on an inside of the trench, a reflective layer deposited on the first oxide film for reflecting incident light to a side of the photodiode, and a second oxide layer formed on the reflective layer.

REFERENCES:
patent: 6489643 (2002-12-01), Lee et al.
patent: 2004/0238908 (2004-12-01), Hashimoto
patent: 2005/0151218 (2005-07-01), Mouli

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