Process for fabricating strained layers of silicon or of a...

Details Process for fabricating strained layers of silicon or of a... Process for fabricating strained layers of silicon or of a...

2007-10-09

2007-10-09

Jackson, Jerome (Department: 2815)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

C438S960000, C257S075000, C257SE21215

Reexamination Certificate

active

10882995

ABSTRACT:
A process for fabricating a strained layer of silicon or of a silicon/germanium alloy, includes:a) the formation of a layer (2) of silicon or of a silicon/germanium alloy on a layer (1) of a material having a modifiable lattice parameter; andb) the modification of the lattice parameter.

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