Semiconductor device with reduced time-dependent dielectric fail

Details Semiconductor device with reduced time-dependent dielectric fail Semiconductor device with reduced time-dependent dielectric fail

1995-06-07

1996-06-04

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257405, 257645, H01L 2906, H01L 2978

Patent

active

055236030

ABSTRACT:
An insulated gate field-effect transistor or similar semiconductor-insulator-semiconductor structure has an increased time-dependent dielectric failure lifetime due to a reduction in the field across the gate insulator. The electric field in the gate insulator is reduced without degrading device performance by limiting the field only when the gate voltage exceeds its nominal range. The field is limited by lowering the impurity concentration in a polysilicon gate electrode so that the voltage drop across the gate insulator is reduced. In order to avoid degrading the device performance when the device is operating with nominal voltage levels, a fixed charge is imposed at the interface between the gate electrode and the gate insulator, so at a gate voltage of about the supply voltage level the response changes to exhibit less increase in the drop across the gate insulator for higher voltages. Also, the impurity level in the gate electrode may be low enough so that the gate is in deep depletion for transient increases in gate voltage, thereby limiting the drop across the gate insulator.

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