Multi-layered structure having single crystalline semiconductor

Details Multi-layered structure having single crystalline semiconductor Multi-layered structure having single crystalline semiconductor

1994-08-16

1996-06-04

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257350, 257351, H01L 2701

Patent

active

055236022

ABSTRACT:
Disclosed is an multi-layered SOI substrate, which includes a supporting substrate, and a first insulator, a semiconductor film, a second insulator and a single crystalline semiconductor film (SOI film) which are layered on the main surface of the supporting substrate. The SOI substrate is formed by a direct bonding technique, and a bipolar transistor and an MOS transistor are formed using the single crystalline semiconductor film (SOI layer). The extremely shallow junction can be formed without epitaxial growth, thereby significantly increasing the operation speed of the semiconductor device at a low cost.

REFERENCES:
patent: 4596604 (1986-06-01), Akiyama et al.
patent: 4875086 (1989-10-01), Malhi et al.
patent: 4974041 (1990-11-01), Grinberg
patent: 5233211 (1993-08-01), Hayashi et al.
patent: 5233218 (1993-08-01), Miura
patent: 5355022 (1994-10-01), Sugahara et al.
patent: 5355330 (1994-10-01), Hisamoto et al.

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