High voltage MIS field effect transistor

Details High voltage MIS field effect transistor High voltage MIS field effect transistor

1994-02-14

1996-06-04

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257335, 257343, 257401, 257653, H01L 2976

Patent

active

055235999

ABSTRACT:
A high voltage MIS field effect transistor includes a semiconductor substrate of a first conductivity type; a semiconductor layer of a second conductivity type formed on an obverse surface side of the semiconductor substrate; a base layer of the first conductivity type formed in the semiconductor layer; a source layer of the second conductivity type formed in the base layer; a source electrode abutting the source layer; a gate electrode formed in such a manner as to extend from the source layer to the semiconductor layer via an insulating gate film; a drain section including a drain layer of the second conductivity type formed in the semiconductor layer in such a manner as to be spaced apart from the source layer; and a low-concentration region of the first conductivity type being formed in a vicinity of a periphery of a base corner portion of said base layer. Another low-concentration region of the second conductivity type is further formed in a vicinity of a periphery of a drain corner portion of the base layer.

REFERENCES:
patent: 5055896 (1991-10-01), Williams et al.
E. J. Wildi et al., "Modeling and Process Implementation of Implanted Resurf Type Devices," Technical Digest of the International Electron Devices Meeting 1982, San Franciso, CA, Dec. 13-15, pp. 268-271.
Fujishima et al., "Low On-Resistance High-Voltage Power DMOSfet with an Interdigitated Form," 1993 International Conference on Solid State Devices and Materials, Makuhari Messe Aug. 29-Sep. 1, pp. 491-493.
M. Amato, "Reduced Electric Field Crowding at the Fingertips of Lateral Dmos Transistors," Extended Abstracts, Spring 1987, No. 1, pp. 161-162.

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