Semiconductor integrated circuit device

Details Semiconductor integrated circuit device Semiconductor integrated circuit device

Filed on

1994-06-14

Date issued

1996-06-04

Examiner

Jackson, Jerome

Patent Class

Active solid-state devices (e.g., transistors, solid-state diode

SubClass

Field effect device

SubSubClass

Having insulated electrode

Other Related Categories

257390, H01L 27108, H01L 2976, H01L 2994, H01L 31119

Type

Patent

Status

active

Patent number

055235980

Description

ABSTRACT:
The gate electrodes of the driver MISFETs, transfer MISFETs and load MISFETS of the static random access memory (SRAM) are formed of the first-level conductive layer deposited over the main surface of the semiconductor substrate. The gate electrodes, power source voltage line, reference voltage line, local interconnection lines, and complementary data lines, all making up the conductive layers of the SRAM memory cell, are formed of different conductive layers, i.e. conductive layers of different levels. The local interconnection lines and the reference voltage line or power source voltage line are arranged, with respect to a plan view of the main surface of the substrate, to cross each other and a capacitance is formed in the intersecting regions.

REFERENCES:
patent: 4262297 (1981-04-01), Partridge
patent: 4358432 (1983-05-01), Kuo et al.

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