Semiconductor device having capacitor and manufacturing method t

Details Semiconductor device having capacitor and manufacturing method t Semiconductor device having capacitor and manufacturing method t

1995-03-14

1996-06-04

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257314, 257411, 257532, H01L 27108

Patent

active

055235964

ABSTRACT:
A capacitor includes a polycrystalline silicon layer 1 as a lower electrode layer, a dielectric layer 112, and a polycrystalline silicon layer 113 as an upper electrode layer. The dielectric layer 112 is formed by an oxynitride film 2, a silicon nitride film 3 and a top oxide film 4. A film thickness t.sub.3 of the top oxide film 4 is controlled to be less than 20 .ANG.. Capacitance of the capacitor can be increased while improving the duration of life of the dielectric layer, resulting in a highly reliable capacitor.

REFERENCES:
patent: 4907046 (1990-03-01), Ohji et al.
patent: 4943836 (1990-07-01), Mori
patent: 4990463 (1991-02-01), Mori
Ajika et al., "Enhanced Reliability of Native Oxide Free Capacitor Dielectrics on Rapid Thermal Nitrided Polysilicon", 1991 Symposium on VLSI Technology Digest of Technical Papers, pp. 63-64.

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