Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-12-11
2007-12-11
Crane, Sara (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S365000
Reexamination Certificate
active
10800035
ABSTRACT:
The invention provides a semiconductor device which consumes less power in pending. The invention further provides a semiconductor device in which a gate electrode is provided over both sides of a semiconductor thin film which forms a transistor, a logic signal is applied to a first gate electrode, a threshold value control signal is applied to a second gate electrode, and a threshold value of a transistor which forms the semiconductor device is controlled by a potential of the second gate electrode, and a driving method thereof. Then, the invention provides a semiconductor device provided with a plurality of logic circuits formed of such a transistor with a back gate and a driving method thereof.
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Office Action (Chinese Application No. 200410034252.2, Mar. 9, 2007) with English translation.
Crane Sara
Fish & Richardson P.C.
Semiconductor Energy Laboratory Co,. Ltd.
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