Film-forming method, method of manufacturing semiconductor...

Details Film-forming method, method of manufacturing semiconductor... Film-forming method, method of manufacturing semiconductor...

2007-12-11

2007-12-11

Geyer, Scott B. (Department: 2812)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C257S021000

Reexamination Certificate

active

10821843

ABSTRACT:
Disclosed is a film-forming method, comprising supplying into a plasma processing chamber at least three kinds of gases including a silicon compound gas, an oxidizing gas, and a rare gas, the percentage of the partial pressure of the rare gas (Pr) based on the total pressure being not smaller than 85%, i.e., 85%≦Pr<100%, and generating a plasma within the plasma processing chamber so as to form a film of silicon oxide on a substrate to be processed.

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M. Goto, et al., Jpn. J. Appl. Phys., vol. 42, Part 1, No. 11, pp. 7033-7038, “Surface Wave Plasma Oxidation at Low Temperature Under Rare Gas Dilution”, 2003.
M. Goto, et al., “Surface Wave Plasma Oxidation at Low Temperature for Gate Insulator of Poly-Si TFTs”, Proceedings of The Ninth International Display Workshops, Dec. 4-6, 2002, pp. 355-358.
Reiji Morioka, et al., “Deposition of High-kZirconium Oxides in VHF Plasma-Enhanced CVD Using Metal-Organic Precursor”, Collection of Lecture Documents of the “20thPlasma Processing Research Meeting” sponsored by Plasma Electronics Branch of Applied Physics Institute, Jan. 29, 2003, pp. 317-318.

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