Zeolite-carbon doped oxide composite low k dielectric

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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C438S633000, C438S638000, C438S508000, C438S508000

Reexamination Certificate

active

10716250

ABSTRACT:
A method for forming a zeolite-carbon doped oxide (CDO) composite dielectric material is herein described. Zeolite particles may be dispersed in a solvent. The zeolite solvent solution may then be deposited on an underlying layer, such as a wafer of other dielectric layer. At least some solvent may then be removed to form a zeolite film. A CDO may then be deposited in the zeolite film to form a zeolite-CDO composite film/dielectric. The zeolite-CDO composite film/dielectric may then be calcinated to form a solid phase zeolite-CDO composite dilectric.

REFERENCES:
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patent: 2002/0132468 (2002-09-01), Wong
patent: 2002/0140103 (2002-10-01), Kloster et al.
patent: 2004/0047798 (2004-03-01), Oh et al.
patent: 2005/0236714 (2005-10-01), Leu et al.
Wang, Zhengbao et al., “Pure-Silica Zeolite Low-k Dielectric Thin Films,” Advanced Materials, vol. 13, No. 10, May 17, 2001, pp. 746-749.
Morris, et al. Method of Fabrication of Low Dielectric Constant Porous Metal Silicate Films, U.S. Appl. No. 10/323,988, Filed Dec. 17, 2002, 23 pages.
Zhengbao Wang, et al., Pure Silica Zeolite Films as Low-k Dielectrics by Spin-On of Nanoparticle Suspensions, Advanced Materials 2001, No. 19, Oct. 2, pp. 1463-1466.
Zhengbao Wang, et al., Silica Zeolite Low-k Dielectric Films, Department of Chemical and Environmental Engineering, University of California, Riverside, 15 pages, date unknown.

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