Semiconductor device with single crystal semiconductor...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257S051000, C257S067000, C257S068000, C257S069000, C257S353000

Reexamination Certificate

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11046724

ABSTRACT:
A semiconductor device includes a substrate with an insulating surface and a single crystal semiconductor layer, which is bonded to the insulating surface of the substrate. The device further includes a first insulating layer, which is provided between the insulating surface of the substrate and the single crystal semiconductor layer, and a second insulating layer, which has been deposited on the entire insulating surface of the substrate except an area in which the first insulating layer is present.

REFERENCES:
patent: 5281840 (1994-01-01), Sarma
patent: 6583440 (2003-06-01), Yasukawa
patent: 2002/0179908 (2002-12-01), Arao
patent: 2003/0113961 (2003-06-01), Horiuchi et al.
patent: 2003/0183876 (2003-10-01), Takafuji et al.
patent: 2004/0061176 (2004-04-01), Takafuji et al.
patent: 2004/0150043 (2004-08-01), Holm et al.
patent: 1 526 567 (2005-04-01), None
patent: 04-103174 (1992-04-01), None
patent: WO 93/15589 (1993-08-01), None
J.P. Salerno, “Single Crystal Silicon AMLCDs”, Conference Record of the 1994 International Display Research Conference (IDRC), pp. 39-44, 1994.
Q.Y. Tong et al., “Semiconductor Wafer Bonding: Science and Technology”, John Wiley & Sons, Inc., 1999.
European Search Report dated Jan. 22, 2007.

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