Method of forming metal line in semiconductor memory device

Details Method of forming metal line in semiconductor memory device Method of forming metal line in semiconductor memory device

2007-08-28

2007-08-28

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S672000, C257SE21537, C257SE21577

Reexamination Certificate

active

11146171

ABSTRACT:
The present invention relates to a method of forming a metal line of a semiconductor memory device. According to the present invention, after a drain contact plug formed within an interlayer insulating film protrudes, a nitride film is formed on the top of the drain contact plug, and a trench etch process is then performed using the nitride film as an etch-stop layer. Therefore, loss of the interlayer insulating film formed between a source contact plug and a metal line can be prevented, and generation of a short circuit between the metal line and the source contact plug can also be prevented.

REFERENCES:
patent: 6294426 (2001-09-01), Tu et al.
patent: 6737694 (2004-05-01), Kim et al.
patent: 6825082 (2004-11-01), Kim et al.

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