Static information storage and retrieval – Read/write circuit – Including reference or bias voltage generator
Reexamination Certificate
2007-11-27
2007-11-27
Dinh, Son (Department: 2824)
Static information storage and retrieval
Read/write circuit
Including reference or bias voltage generator
C365S158000, C365S171000, C365S173000
Reexamination Certificate
active
10541645
ABSTRACT:
A semiconductor memory device in which information is written into a storage element by flowing current. The semiconductor memory device has a shortened write speed and reduced power consumption by preventing parasitic capacitors from prolonging the time required for a write current to reach a predetermined value. The semiconductor memory device includes storage elements for storing information, a constant current source for writing information into the storage element by flowing current, and a boost circuit for charging parasitic capacitors by a time when an amount of a current flowed by the constant current source reaches an amount of a current required to write information into the storage element, at a predetermined position related to the storage element.
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Honda Takeshi
Sakimura Noboru
Sugibayashi Tadahiko
Dinh Son
Luu Pho M.
NEC Corporation
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