Semiconductor device having through electrode and method of...

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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C257SE21575

Reexamination Certificate

active

11088952

ABSTRACT:
With a fluid insulating material applied on a convex substrate and a fluid insulating material applied on a concave substrate, a columnar conductive portion of the convex substrate is inserted into a hole of the concave substrate. With this, a conductive portion and an internal interconnection are electrically connected with each other via a bump. Therefore, a semiconductor device having a through electrode which enables a size reduction, has high reliability and is easily formed even with a large aspect ratio, and a method of manufacturing the same are obtained.

REFERENCES:
patent: 2002-170904 (2002-06-01), None

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