Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2007-10-02
2007-10-02
Ghyka, Alexander (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C252S639000, C252S639000
Reexamination Certificate
active
11012171
ABSTRACT:
A semiconductor device having a crystalline semiconductor film with production of a cavity suppressed and a manufacturing method thereof. A manufacturing method of a semiconductor device according to the invention comprises the steps of forming an amorphous silicon film on a substrate having an insulating surface, adding a metal element such as Ni for promoting crystallization to the amorphous silicon film, applying heat treatment to crystallize the amorphous silicon film, so that a crystalline silicon film is formed on the substrate, removing a silicon oxide film formed on the surface of the crystalline silicon film due to the heat treatment by a solution containing organic solvent and fluoride, and irradiating laser light or strong light to the crystalline silicon film.
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Kitakado Hidehito
Matsuo Takuya
Mitani Yasuhiro
Ohnuma Hideto
Sakakura Masayuki
Costellia Jeffrey L.
Ghyka Alexander
Nixon & Peabody LLP
Semiconductor Energy Laboratory Co,. Ltd.
Sharp Kabushiki Kaisha
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