Use of pulsed grounding source in a plasma reactor

Details Use of pulsed grounding source in a plasma reactor Use of pulsed grounding source in a plasma reactor

2007-11-20

2007-11-20

Vinh, Lan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S706000, C438S710000, C156S345350

Reexamination Certificate

active

10219436

ABSTRACT:
A method for grounding a semiconductor substrate pedestal during a portion of a high voltage power bias oscillation cycle to reduce or eliminate the detrimental effects of feature charging during the operation of a plasma reactor.

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