Method of fabricating nitrogen-containing gate dielectric...

Details Method of fabricating nitrogen-containing gate dielectric... Method of fabricating nitrogen-containing gate dielectric...

2007-12-25

2007-12-25

Smith, Zandra V. (Department: 2822)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C438S770000, C438S773000, C438S775000

Reexamination Certificate

active

11028717

ABSTRACT:
A method of fabricating a nitrogen-containing gate dielectric layer is described. First, a gate dielectric layer is formed on a substrate by performing a dilute wet oxidation process. Then, a nitridation step is performed for doping nitrogen into the gate dielectric layer. After that, a re-oxidation step is performed for repairing the nitrogen-doped gate dielectric layer. The above steps are carried out inside the same reaction chamber. Moreover, two or more wafers can be treated inside the reaction chamber at the same time.

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