Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-06-05
2007-06-05
Smoot, Stephen W. (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S411000
Reexamination Certificate
active
10280387
ABSTRACT:
Methods for forming dielectric layers over polysilicon substrates, useful in the construction of capacitors and other semiconductor circuit components are provided. A self-limiting nitric oxide (NO) anneal of a polysilicon layer such as an HSG polysilicon capacitor electrode, at less than 800° C., is utilized to grow a thin oxide (oxynitride) layer of about 40 angstroms or less over the polysilicon layer. The NO anneal provides a nitrogen layer at the polysilicon-oxide interface that limits further oxidation of the polysilicon layer and growth of the oxide layer. The oxide layer is exposed to a nitrogen-containing gas to nitridize the surface of the oxide layer and reduce the effective dielectric constant of the oxide layer. The process is particularly useful in forming high K dielectric insulating layers such as tantalum pentoxide over polysilicon. The nitridized oxynitride layer inhibits oxidation of the underlying polysilicon layer in a post-treatment oxidizing anneal of the high K dielectric, thus maintaining the oxide layer as a thin layer over the polysilicon layer.
REFERENCES:
patent: 5464783 (1995-11-01), Kim et al.
patent: 5634974 (1997-06-01), Weimer et al.
patent: 5688550 (1997-11-01), Weimer et al.
patent: 5759262 (1998-06-01), Weimer et al.
patent: 5962065 (1999-10-01), Weimer et al.
patent: 6033998 (2000-03-01), Aronowitz et al.
patent: 6063698 (2000-05-01), Tseng et al.
patent: 6087229 (2000-07-01), Aronowitz et al.
patent: 6124164 (2000-09-01), Al-Shareef et al.
patent: 6146959 (2000-11-01), DeBoer et al.
patent: 6162744 (2000-12-01), Al-Shareef et al.
patent: 6198124 (2001-03-01), Sandhu et al.
patent: 6207587 (2001-03-01), Li et al.
patent: 6218256 (2001-04-01), Agarwal
patent: 6235571 (2001-05-01), Doan
patent: 6238964 (2001-05-01), Cho
patent: 6245652 (2001-06-01), Gardner et al.
patent: 6245689 (2001-06-01), Hao et al.
patent: 6278166 (2001-08-01), Ogle, Jr.
patent: 6291868 (2001-09-01), Weimer et al.
patent: 6362086 (2002-03-01), Weimer et al.
patent: 6410968 (2002-06-01), Powell et al.
patent: 6475883 (2002-11-01), Powell et al.
patent: 6548368 (2003-04-01), Narwankar et al.
patent: 6893979 (2005-05-01), Khare et al.
patent: 2001/0024853 (2001-09-01), Wallace et al.
Smoot Stephen W.
Whyte Hirschboeck Dudek SC
LandOfFree
Method of improved high K dielectric—polysilicon... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of improved high K dielectric—polysilicon..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of improved high K dielectric—polysilicon... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3848750