Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-11-06
2007-11-06
Pham, Hoai (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S306000, C257S310000, C257SE27086
Reexamination Certificate
active
11155609
ABSTRACT:
The present invention provides a semiconductor memory device which comprises an interlayer insulating film formed on a semiconductor substrate, a contact plug formed in the interlayer insulating film and having one end electrically connected to the semiconductor substrate, a ferroelectric capacitor formed on the interlayer insulating film and comprising a first electrode, a ferroelectric film and a second electrode electrically connected to the other end of the contact plug, an insulating film which covers the ferroelectric capacitor and has an opening that exposes the first electrode, and a wiring film which covers the ferroelectric capacitor and the insulating film and is electrically connected to the first electrode exposed through the opening and which consists of a material having conductivity and even a hydrogen diffusion preventing function.
REFERENCES:
patent: 6355952 (2002-03-01), Yamoto et al.
patent: 6396092 (2002-05-01), Takatani et al.
patent: 2005/0051821 (2005-03-01), Miki et al.
patent: WO 9831053 (1998-07-01), None
Oki Electric Industry Co. Ltd.
Pham Hoai
Volentine & Whitt P.L.L.C.
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