Process for depositing highly doped polysilicon layer on stepped

Details Process for depositing highly doped polysilicon layer on stepped Process for depositing highly doped polysilicon layer on stepped

1991-10-31

1992-08-25

Hearn, Brien E.

Fishing, trapping, and vermin destroying

437110, 437233, 437160, H01L 21225

Patent

active

051418924

ABSTRACT:
A polysilicon deposition process is disclosed for forming a doped polysilicon layer over a stepped surface on a semiconductor wafer having the deposition characteristics and resulting profile of an undoped polysilicon layer which comprises: depositing doped polysilicon on the stepped surface, depositing undoped polysilicon over the doped polysilicon, repeating the doped and undoped depositions cyclically until the desired amount of polysilicon has been deposited, and then annealing the deposited polysilicon to uniformly distribute the dopant throughout the entire deposited polysilicon layer.

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patent: 4829024 (1989-05-01), Klein et al.
patent: 4830972 (1989-05-01), Hamasaki
patent: 4977104 (1990-12-01), Sawada et al.
patent: 5679306 (1987-07-01), Shimizu
S. Wolf et al., Silicon Processing for the VLSI Era, Lattice Press, Sunset Beach, 1986 pp. 30 7-8.

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