Semiconductor device manufacturing: process – Chemical etching – Liquid phase etching
Reexamination Certificate
2007-02-27
2007-02-27
Deo, Duy-Vu N. (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Liquid phase etching
C438S753000
Reexamination Certificate
active
11027734
ABSTRACT:
A method for fabricating a semiconductor device is disclosed. In the method, a buffer oxide film and a nitride film are formed on a semiconductor substrate in succession, an opening is formed in the nitride film and the buffer oxide film for exposing a field region of the semiconductor substrate, the expose semiconductor substrate is wet etched with dilute HF solution and irradiated with a UV beam to form a trench with rounded upper edges and lower corners. Then, an oxide film is gap filled in the trench, the oxide film is planarized, and the nitride film and the buffer oxide film are removed to expose an active region of the semiconductor substrate. The present invention can moderate field concentrations at the upper edges and lower corners of the trench, reduce a leakage current from the semiconductor device, and improve electrical characteristics and/or yield of the semiconductor device.
REFERENCES:
patent: 5065273 (1991-11-01), Rajeevakumar
patent: 5460687 (1995-10-01), Douglas
patent: 5520299 (1996-05-01), Belcher et al.
patent: 5603848 (1997-02-01), Beratan et al.
patent: 5676760 (1997-10-01), Aoki et al.
patent: 6037270 (2000-03-01), Kageyama et al.
patent: 2004/0127035 (2004-07-01), Lee
Deo Duy-Vu N.
Dongbu Electronics Co. Ltd.
Fortney Andrew D.
LandOfFree
Method for fabricating semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for fabricating semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3842172